MCP14E9T-E/MF【PDF 1/30 页】IC MOSFET DRIVER 3A 8DFN-S

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MCP14E9/10/11

3.0A Dual High-Speed Power MOSFET Driver With Enable

Features

? High Peak Output Current: 3.0A (typical)

? Independent Enable Function for Each Driver

Output

? Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

? Low Shoot-Through/Cross-Conduction Current in

Output Stage

? High Capacitive Load Drive Capability:

- t R : 14 ns with 1800 pF load (typical)

- t F : 17 ns with 1800 pF load (typical)

? Short Delay Times:

- t D1 : 45 ns (typical)

- t D2 : 45 ns (typical)

? Low Supply Current:

- With Logic ‘ 1 ’ Input/Enable – 1 mA (typical)

- With Logic ‘ 0 ’ Input/Enable – 300 μA (typical)

? Latch-up Protected: Passed JEDEC JESD78A

? Logic Input will Withstand Negative Swing,

up to 5V

? Space-Saving Packages:

- 8-Lead SOIC, PDIP, 6x5 DFN

Applications

? Switch Mode Power Supplies

? Pulse Transformer Drive

? Line Drivers

General Description

The MCP14E9/10/11 devices are high-speed MOSFET

drivers, capable of providing 3.0A of peak current. The

dual inverting, dual non-inverting and complementary

outputs are directly controlled from either TTL or

CMOS (3V to 18V). These devices also feature low

shoot-through current, near matched rise/fall times and

propagation delays, which make them ideal for high

switching frequency applications.

The MCP14E9/10/11 devices operate from a 4.5V to

18V single power supply and can easily charge and

discharge 1800 pF of MOSFET gate capacitance. They

provide low enough impedances, in both the ON and

OFF states, to ensure the MOSFETs’ intended state

will not be affected, even by large transients.

The additional control of the MCP14E9/10/11 outputs is

allowed by the use of separate enable functions. The

ENB_A and ENB_B pins are active-high and are

internally pulled up to V DD . The pins may be left floating

for standard operation.

The MCP14E9/10/11 dual output 3.0A driver family is

offered in both surface-mount and pin-through-hole

packages with a -40 o C to +125 o C temperature rating.

The low thermal resistance of the thermally enhanced

DFN package allows greater power dissipation

capability for driving heavier capacitive or resistive

loads.

These devices are highly latch-up resistant under any

conditions within their power and voltage ratings. They

are not subject to damage when up to 5V of noise

Motor and Solenoid Drive

spiking (of either polarity) occurs on the ground pin.

The devices are fully latch-up protected when tested

according to JEDEC JESD78A. All terminals are fully

protected against Electrostatic Discharge (ESD), up to

4 kV (HBM) or 400V (MM).

? 2011 Microchip Technology Inc.

DS25005A-page 1

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